Semiconductor memory device with a sense amplifier
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United States of America Patent
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Jan 17, 1989
Issued Date -
N/A
app pub date -
Mar 4, 1988
filing date -
Jan 26, 1985
priority date (Note) -
Expired
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Abstract
A semiconductor memory device comprises memory cell transistors each having a double layered gate having a floating gate and a control gate. The memory device comprises a transistor for receiving a predetermined voltage from a source external to the memory device and providing it as a reference voltage in response to a control signal, and a sense amplifier for comparing a voltage dependent on the data read from the memory cell with the reference voltage.
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