Semiconductor memory system with dynamic random access memory cells
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United States of America Patent
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Jan 24, 1989
Grant Date -
N/A
app pub date -
Aug 13, 1987
filing date -
Aug 19, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A dynamic random access memory system comprises first and second memory banks. A plurality of memory cells connected to a word line are grouped into first and second groups. The first group is arranged in the first memory bank and the second group is arranged in the second memory bank. Read/write means is provided in which each n bits from and to the first group and each n bits from and to the second group are read and written alternatively. Each bit is read and written in synchronism with the toggles of a column address strobe signal.
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