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Abstract

A semiconductor nonvolatile memory device includes a plurality of nonvolatile random access memory cells constituted by volatile memory cells and nonvolatile erasable programmable read only memory cells. A sense circuit senses a level of potential of a power source, and based on the sensed level, selects a store operation or a recall operation. Also included are a first terminal for the power source and a second terminal for an auxiliary power source. The detection of a rise or fall of the potential at the first terminal is carried out in the sense circuit and based on the result of the potential detection, a data transmission from the volatile random access memory cell to the nonvolatile erasable programmable read only memory cell or from the nonvolatile erasable programmable read only memory to the volatile random access memory is automatically carried out.

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