Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors
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United States of America Patent
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Jan 31, 1989
Grant Date -
N/A
app pub date -
Aug 7, 1986
filing date -
Aug 7, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.
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