Method of forming a photoresist pattern
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United States of America Patent
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-
Jan 31, 1989
Issued Date -
N/A
app pub date -
Dec 3, 1987
filing date -
Apr 18, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a photoresist pattern wherein a photoresist coating film of naphthoquinone diazide sulfonate of novolak is formed on a substrate layer, the photoresist coating film is exposed by selectively irradiating with near ultraviolet radiation of 350 to 450 nm through a photomask, and the exposed photoresist coating film is developed with an either a negative type or positive type developing solution. The resultant photoresist pattern is usable for manufacturing a highly integrated circuit such as LSI which requires fine processing techniques.
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