Process for forming sub-micrometer patterns using silylation of resist side walls
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United States of America Patent
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-
Feb 7, 1989
Grant Date -
N/A
app pub date -
Mar 17, 1987
filing date -
Mar 27, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for forming sidewalls for use in the fabrication of semiconductor structures, where the thin, vertical sidewalls are 'image transferred' to define sub-micron lateral dimensions. First, a patterned resist profile with substantially vertical edges is formed on a substrate on which the sidewalls are to be created. Then, the profile is soaked in a reactive organometallic silylation agent to silylate the top and the vertical edges of the resist to a predetermined depth, thereby rendering the profile surfaces highly oxygen etch resistant. In a subsequent anisotropic RIE process, the horizontal surfaces of the silylated profile and the unsilylated resist are removed, leaving the silylated vertical edges, that provide the desired free-standing sidewalls, essentially unaffected.
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