Method of making a DH laser with strained layers by MBE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 14, 1989
Issued Date -
N/A
app pub date -
Nov 4, 1987
filing date -
Apr 18, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition In.sub.y Ga.sub.1-y As on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully