Dry etch of phosphosilicate glass with selectivity to undoped oxide
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United States of America Patent
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Feb 21, 1989
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N/A
app pub date -
Nov 20, 1987
filing date -
Jul 15, 1985
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Abstract
An etchant of PSG (14) or BPSG with high selectivity to substantially undoped oxide (12) includes a fluorine-liberating compound and a fluorine-scavenging compound. The fluorine-liberating compound is preferably a perfluorinated inorganic compound, and the fluorine-scavenging compound is preferably a hydrogen-liberating compound such as hydrogen. A particularly preferred inorganic fluorine-liberating compound is nitrogen trifluoride. In an exemplary embodiment, etch rate ratios of PSG to undoped oxide as high as 11 to 1 were obtained.
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