Method for manufacturing a mosic having self-aligned contact holes
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United States of America Patent
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Mar 7, 1989
Grant Date -
N/A
app pub date -
Jul 2, 1985
filing date -
Jul 3, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for manufacturing a MOSIC includes a step of forming a protective film of silicon nitride, which covers the top and side walls of a gate electrode structure including a doped polysilicon, a step of forming an interlayer insulating film and a step of forming a contact pattern in the interlayer insulating film immediately adjacent to a portion of the protective film in a self-aligned fashion with respect to the gate electrode structure. The presence of the protective film which covers the top and side walls of the doped polysilicon, which defines a gate electrode of a MOSFET, allows forming a pair of associated contact holes for drain and source regions in a self-aligned fashion, which contributes for higher integration.
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