The disclosure relates to a method of forming an isolated semiconductor, preferably of the vertical bipolar variety, wherein a porous highly doped semiconductor layer is oxidized and, with a trench containing silicon oxide therein, forms a region encasing a moderately doped epitaxial layer disposed beneath a lightly doped epitaxial layer. The vertical bipolar device is formed in the moderately doped and lightly doped layers with the highly doped epitaxially deposited layer, which is now a silicon oxide layer, forming a portion of the isolation. The anodization of the highly doped layer takes place using an anodizing acid at a temperature of from about 0 to about 10 degrees C.
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