US Patent No: 4,810,667

Number of patents in Portfolio can not be more than 2000

Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer

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Abstract

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The disclosure relates to a method of forming an isolated semiconductor, preferably of the vertical bipolar variety, wherein a porous highly doped semiconductor layer is oxidized and, with a trench containing silicon oxide therein, forms a region encasing a moderately doped epitaxial layer disposed beneath a lightly doped epitaxial layer. The vertical bipolar device is formed in the moderately doped and lightly doped layers with the highly doped epitaxially deposited layer, which is now a silicon oxide layer, forming a portion of the isolation. The anodization of the highly doped layer takes place using an anodizing acid at a temperature of from about 0 to about 10 degrees C.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TEXAS INSTRUMENTS INCORPORATEDDALLAS, TX15461

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Spratt, David B Plano, TX 18 296
Yeakley, Richard L Dallas, TX 4 88
Zorinsky, Eldon J Plano, TX 11 203

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TEXAS INSTRUMENTS INCORPORATED (1)
* 4,628,591 Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon 28 1984
 
Bell Telephone Laboratories, Incorporated (1)
* 4,643,804 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices 9 1985
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (2)
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* 5,057,022 Method of making a silicon integrated circuit waveguide 11 1990
 
Westinghouse Electric Corp. (1)
* 5,110,755 Process for forming a component insulator on a silicon substrate 9 1990
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
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CYPRESS SEMICONDUCTOR CORPORATION (2)
* 5,897,354 Method of forming a non-volatile memory device with ramped tunnel dielectric layer 51 1996
* 5,741,737 MOS transistor with ramped gate oxide thickness and method for making same 32 1996
 
FREESCALE SEMICONDUCTOR, INC. (1)
* 5,217,920 Method of forming substrate contact trenches and isolation trenches using anodization for isolation 28 1992
 
MICRON TECHNOLOGY, INC. (3)
* 6,489,192 Base current reversal SRAM memory cell and method 2 2001
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6,891,213 Base current reversal SRAM memory cell and method 1 2003
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 4,910,165 Method for forming epitaxial silicon on insulator structures using oxidized porous silicon 24 1988
 
SGS-THOMSON MICROELECTRONICS, INC. (1)
* 5,135,884 Method of producing isoplanar isolated active regions 3 1991
 
MICROSEMI CORPORATION (1)
* 5,049,521 Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate 26 1989
 
UTMC MICROELECTRONIC SYSTEMS INC. (1)
* 5,344,785 Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate 30 1993
 
NATIONAL SEMICONDUCTOR CORPORATION (3)
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* 5,372,952 Method for forming isolated semiconductor structures 9 1992
* 5,376,560 Method for forming isolated semiconductor structures 65 1994
 
TEXAS INSTRUMENTS INCORPORATED (2)
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* 5,049,513 Bi CMOS/SOI process flow 10 1990
 
AEROFLEX COLORADO SPRINGS INC. (1)
* 5,561,073 Method of fabricating an isolation trench for analog bipolar devices in harsh environments 24 1994
 
The United States of America as represented by the Secretary of the Navy (1)
* 5,420,049 Method of controlling photoemission from porous silicon using ion implantation 11 1993
 
STMICROELECTRONICS S.A. (1)
* 7,456,071 Method for forming a strongly-conductive buried layer in a semiconductor substrate 1 2005
 
KABUSHIKI KAISHA TOSHIBA (1)
* 5,688,702 Process of making a semiconductor device using a silicon-on-insulator substrate 17 1994
 
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (1)
* 5,773,353 Method of fabricating a semiconductor substrate 2 1995
 
MAGNACHIP SEMICONDUCTOR, LTD. (1)
* 5,686,342 Method for insulating semiconductor elements 9 1995
 
YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM (2)
8,828,781 Method for producing photovoltaic device isolated by porous silicon 0 2013
8,829,332 Photovoltaic device formed on porous silicon isolation 0 2013
 
NEC ELECTRONICS CORPORATION (1)
* 5,494,846 Method of manufacturing semiconductor device 25 1994
* Cited By Examiner