Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer

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United States of America Patent

PATENT NO 4810667
SERIAL NO

07043510

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Abstract

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The disclosure relates to a method of forming an isolated semiconductor, preferably of the vertical bipolar variety, wherein a porous highly doped semiconductor layer is oxidized and, with a trench containing silicon oxide therein, forms a region encasing a moderately doped epitaxial layer disposed beneath a lightly doped epitaxial layer. The vertical bipolar device is formed in the moderately doped and lightly doped layers with the highly doped epitaxially deposited layer, which is now a silicon oxide layer, forming a portion of the isolation. The anodization of the highly doped layer takes place using an anodizing acid at a temperature of from about 0 to about 10 degrees C.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TEXAS INSTRUMENTS INCORPORATEDDALLAS, TX16971

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Spratt, David B Plano, TX 17 299
Yeakley, Richard L Dallas, TX 4 88
Zorinsky, Eldon J Plano, TX 11 205

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TEXAS INSTRUMENTS INCORPORATED (1)
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BELL TELEPHONE LABORATORIES, INCORPORATED (1)
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* Cited By Examiner

Patent Citation Ranking

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Other [Check patent profile for assignment information] (2)
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YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. (2)
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* Cited By Examiner