Method for the collective chemical cutting out of semiconductor devices, and a device cut out by this method
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United States of America Patent
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Mar 7, 1989
Grant Date -
N/A
app pub date -
Dec 29, 1987
filing date -
Dec 29, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention provides a method for cutting out very small sized semiconductor devices, mounted on a gold base, including the formation of depth indicators etched through the active layer, on a manufacturing wafer, and penetrating into the substrate, said indicators being metallized then, after masking, the gold bases are deposited. A mechanical metal support makes it possible to thin down the substrate and to etch the mesa diodes on their gold bases, the metal of the mechanical support then being etched by an acid solution which cuts out the diodes.
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