Semiconductor pressure sensor
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United States of America Patent
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-
Mar 21, 1989
Grant Date -
N/A
app pub date -
Jul 31, 1987
filing date -
Aug 1, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
There is a bridge circuit which is driven by a constant-current including a thermistor. The bridge circuit is constituted by strain gages defined by P-type diffused layers. Strain gages which constitute in combination the bridge circuit are defined by diffused resistor layers having a surface impurity concentration which is set so as to fall within the range from 2.3.times.10.sup.18 to 2.5.times.10.sup.18 atoms/cm.sup.3. The B constant of the thermistor is selected so as to fall within the range from 1400K to 2400K.
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