Method for altering characteristics of junction semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 4820657
SERIAL NO

07053475

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor material involves applying at least one pulse --a voltage pulse, a current pulse, an energy pulse, or a power pulse and so forth-- across the junction, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to alter the electrical characteristics of the junction, and thereby, the electrical characteristic of the circuit. The pulse is applied across the junction by applying it to at least one terminal or electrode which is contacted to the first or second semiconductor material. In addition, the amplitudes of the electrical parameters and time duration of the at least one pulse should be low enough to ensure that dendrites or filaments of material from the at least one electrode, for example, metal, are not formed in the first or second semiconductor material.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
GEORGIA TECH RESEARCH CORPORATION GEORGIA INSTITUTE OF TECHNOLOGY ATLANTA GA 30332-0420 A CORP OF GANot Provided

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feeney, Robert K Doraville, GA 4 112
Hughes, David W Chamblee, GA 28 862

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation