Resin packaged semiconductor device having a protective layer made of a metal-organic matter compound

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United States of America Patent

PATENT NO 4821148
SERIAL NO

06870399

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Abstract

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A silver electrode (4) on a lead frame (2) is bonded to an aluminum electrode (5) on a silicon chip (1) with a copper wire (3). The resulting semiconductor device was immersed in a solution of benzotriazole in ethyl alcohol. An Ag-benzotriazole film (6) was formed on the surface of the silver electrode (4) and a Cu-benzotriazole film (7) was formed on the surface of the copper wire (3), while an Al-benzotriazole film (8) was formed on the surface of the aluminum electrode (5). Even if water penetrates into the semiconductor device, the silver electrode (4), the aluminum electrode (5) and the copper wire (3) are effectively protected by the anti-corrosive Ag-benzotriazole film (6), Cu-benzotriazole film (7) and Al-benzotriazole film (8) to exhibit excellent damp-proof.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTD A CORP OF JAPAN6 KANDA SURUGADAI 4-CHOME CHIYODA-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itoh, Masahiko Hitachi, JP 43 546
Kobayashi, Shiro Hitachi, JP 59 486
Minato, Akira Hitachi, JP 14 254

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