Method of fabricating large area semiconductor arrays
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United States of America Patent
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Apr 18, 1989
Grant Date -
N/A
app pub date -
Apr 25, 1988
filing date -
Apr 25, 1988
priority date (Note) -
Expired
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Abstract
A method for separating chips formed on a silicon substrate is provided which uses a combination of reactive ion etching techniques combined with orientation etching to yield integrated chips having edges which can be more precisely butted together to form large area arrays.
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