Triamine positive photoresist stripping composition and prebaking process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 25, 1989
Grant Date -
N/A
app pub date -
Jul 30, 1987
filing date -
Jul 30, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A stripping composition for removing positive organic photoresist from a substrate, such as a semiconductor wafer, contains a triamine, such as diethylene triamine, and a nonpolar or polar organic solvent, such as N-methyl pyrrolidone. This composition will remove positive photoresist from semiconductor wafers, even after ion implantation into the wafers through the positive photo-resist. The wafers are immersed in the composition, for example, at a temperature of 110.degree. C. for five minutes, in an ultrasonic bath after heavy ion implantation doses through the photoresist, such as 1.times.10.sup.16 ions/cm.sup.2, for complete removal of the photoresist. Prebaking the photoresist at a temperature of between about 150.degree. and 220.degree. C. for a time of from about 15 minutes to about 30 minutes, prior to stripping the positive organic photoresist layer with the triamine, enhances the removal.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully