Disconnectable power semiconductor component
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United States of America Patent
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-
May 9, 1989
Issued Date -
N/A
app pub date -
Jan 27, 1988
filing date -
Oct 19, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A field-controlled thyristor having a sequence of layers consisting of anode layer, channel layer and gate regions and cathode regions, which regions are alternately arranged at the cathode side, wherein an improvement in the turn-off gain is achieved by a p-type doping of the side walls of the troughs which separate the cathode regions from each other, and/or by an additional intermediate layer which has low p-type doping and which is arranged between adjacent gate regions.
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