Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith
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United States of America Patent
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May 16, 1989
Grant Date -
N/A
app pub date -
Dec 22, 1986
filing date -
Dec 24, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for forming a deposited film which comprises introducing a linear, branched or cyclic gaseous silane compound represented by a general formula: Si.sub.x H.sub.y X.sub.z wherein X stands for a halogen atom, x is an integer 3, 4, 5 or 6, and y+z=2x or 2x+2; into a film forming space for forming a deposited film on a substrate, activating said silane compound on the surface of the heated substrate to generate a precursor functioning as a raw material for forming the deposited film, generating an active species capable of an interaction with said precursor in a separate activating space, and introducing said active species into the film forming space to form a deposited film on said substrate.
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