High-speed, asynchronous, No-Fall-Through, first-in-first out memory with high data integrity

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United States of America Patent

PATENT NO 4833651
SERIAL NO

06889824

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Abstract

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A No-Fall-Through, FIFO memory includes a memory section comprising a plurality of locations for storing data words. Data words are written into the storage locations in response to a write clock input signal. Data words are read from the storage locations, in the same sequence as previously written, in response to a read clock signal. A write pointer maintains a write pointer value indicative of the number of data words which have been written. A read pointer maintains a read pointer value indicative of the number of data words which have been read. A comparator monitors the write pointer and read pointer values and detects differences between the two. The characteristics of the differences are utilized to control internal operations of the FIFO.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL SEMICONDUCTOR CORPORATIONSANTA CLARA CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hanjani, Hassan M Sunnyvale, CA 3 97
Seltzer, Jeffrey H San Jose, CA 16 549

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