Resist pattern forming process with dry etching
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United States of America Patent
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-
May 30, 1989
Issued Date -
N/A
app pub date -
Jun 10, 1987
filing date -
Sep 14, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.
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