Binary chlorofluorocarbon chemistry for plasma etching

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United States of America Patent

PATENT NO 4836886
SERIAL NO

07123639

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Abstract

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A plasma comprised of trifluorochloromethane and an oxidant etches non-insulating materials such as tungsten at very high etch rates when the oxidant comprises at least 50% of the plasma by volume.

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Patent Owner(s)

Patent OwnerAddress
INTERNATONAL BUSINESS MACHINES CORPORATION ARMONK NEW YORK 10504 A CORP OF NYNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Daubenspeck, Timothy H Colchester, VT 147 1819

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