Chlorofluorocarbon additives for enhancing etch rates in fluorinated halocarbon/oxidant plasmas
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United States of America Patent
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Jun 6, 1989
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N/A
app pub date -
Nov 23, 1987
filing date -
Nov 23, 1987
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Expired
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Abstract
A plasma comprised of a fluorinated gas, an oxidant, and up to 15%-20% chlorofluorocarbon gas etches non-insulating materials such as tungsten and silicon at very high etch rates while providing enhanced etch rate ratios to photoresist and insulators.
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