Method for producing thin conductive and semi-conductive layers in mono-crystal silicon
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United States of America Patent
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Jun 6, 1989
Issued Date -
N/A
app pub date -
Jul 30, 1987
filing date -
Aug 29, 1986
priority date (Note) -
Expired
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Abstract
A method for producing thin conductive or semiconductive layers embedded in silicon in the manufacture of structures for integrated circuits and the like. The invention is characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-determined nominal depth, and subsequently causing the implanted metal atoms to be redistributed, to form a conductive or a semiconductive layer (16), by heat-treating the silicon substrate (15).
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