LCMOS displays fabricated with implant treated silicon wafers
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United States of America Patent
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Jun 13, 1989
Issued Date -
N/A
app pub date -
Oct 13, 1988
filing date -
Aug 27, 1987
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Expired
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Abstract
An improved LCMOS display device employing a silicon-on-insulator (SOI) substrate having an epitaxial silicon layer lying over an implant-generated dielectric layer. MOS device and capacitor elements used to activate the display are formed and interconnected in the epitaxial silicon. The implant-generated dielectric layer and underlying silicon substrate also serve as capacitor elements, thereby simplifying the structure and fabrication of the display device and providing improved operation through improved isolation of the MOS device elements formed in the epitaxial silicon from the substrate.
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