Importance

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Abstract

Storage charges held in a photosensitive section of a CCD, serving as a solid-state imaging device, are simultaneously transferred to a high-speed transfer section, in response to a field shift pulse from a driver. The high-speed transfer section then transfers the charges to a field memory, in unit of lines and at a high speed. The field memory includes first and second memory arrays each having a one-field memory capacity and corresponding to a high-speed transfer array in the high-speed transfer section. Charges from each high-speed transfer array are alternately transferred to the first and second field memory arrays by a gate controlled by gate pulses supplied from the driver. The charges stored in the first field memory array are read out and transferred by a line transfer section, in units of lines, thereby obtaining a video signal of an odd-numbered field. Thereafter, the charges stored in the second field memory array are read out and transferred by the line transfer section, in units of lines, thereby obtaining a video signal of an even-numbered field.

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First Claim