Importance

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Abstract

A PIN type semiconductor photoelectric conversion device is provided with a non-single-crystal semiconductor laminate member which comprises a first non-single-crystal semiconductor layer of a first conductivity, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type, and first and second electrodes which make ohmic contact with the first and third non-single-crystal semiconductor layers, respectively. Either one or both of the first and third non-single-crystal semiconductor layers have a fibrous structure which has a smaller light absorption coefficient than do the non-single-crystal semiconductors of the amorphous and microcrystalline structures formed of the same semiconductor material. The non-single-crystal semiconductor layer of the fibrous structure is formed by a chemical vapor reaction of a gas mixture of semiconductor material gas, recombination center netralizer gas and impurity material gas in a reaction chamber in the same manner as has been employed in the manufacture of the conventional semiconductor photoelectric conversion devices. In this case, the substrate on which the non-single-crystal semiconductor layer is to be formed is disposed so that stream of the gas mixture may be passed over the substrate, and the chemical vapor reaction is carried out at a pressure of 0.001 to 10 Torr and at 100.degree. to 400.degree. C. in the reaction chamber.

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First Claim