Importance

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Abstract

A semiconductor light modulator is disclosed. The light modulator comprises a semiconductor body and a waveguide for guiding light rays formed in the body. The waveguide comprises waveguide sections of first and second types formed alternately in a series. Each waveguide section of the first type is delimited at least in part by a depletion zone. A voltage U may be applied for controlling the size of the depletion zone delimiting the sections of the first type to vary the ability of the sections of the first type to guide light. Illustratively, when the voltage U is near zero, the light confining characteristics of the sections of the first and second type are substantially identical, so that light rays are guided along the waveguide from one section to another. When the voltage U is increased so as to increase the size of the depletion zones delimiting the waveguide sections of the first type, then there are losses within the waveguide sections of the first type and at the interfaces between the waveguide sections of the first and second type. Thus, the voltage U may be applied to selectively modulate the intensity of light propagating in the waveguide.

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First Claim