Method for fabricating photovoltaic device having improved short wavelength photoresponse
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United States of America Patent
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Jul 4, 1989
Grant Date -
N/A
app pub date -
Apr 23, 1987
filing date -
Apr 23, 1987
priority date (Note) -
Expired
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Abstract
Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.
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