Tandem photoelectric conversion device
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United States of America Patent
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-
Jul 11, 1989
Grant Date -
N/A
app pub date -
Dec 17, 1986
filing date -
Dec 17, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.
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