Magnetron sputtering apparatus and process
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United States of America Patent
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Jul 25, 1989
Grant Date -
N/A
app pub date -
Feb 8, 1988
filing date -
Feb 8, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.
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