Integratable microwave devices based on ferromagnetic films disposed on dielectric substrates
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United States of America Patent
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Aug 1, 1989
Grant Date -
N/A
app pub date -
Jun 30, 1988
filing date -
Jun 30, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Integratable microwave devices such as a tuneable band reject filter or an r.f. switch are provided on a gallium arsenide substrate having a (100) orientation. Each of the devices includes a layer of a ferromagnetic material having a pair of easy axes which lie in the plane of said (100) orientated substrate and a layer of a conductive, nonmagnetic material disposed thereover. The ferromagnetic material has a ferromagnetic resonant frequency related to the applied DC magnetic field, the anisotropy field, the saturation magnetization, and gyromagnetic ratio. Such devices are provided by utilizing the ferromagnetic resonant properties of the ferromagnetic material disposed on the (100) substrate.
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