Modulation doped high electron mobility transistor with n-i-p-i structure
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United States of America Patent
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Aug 8, 1989
Grant Date -
N/A
app pub date -
Jul 6, 1987
filing date -
Jul 6, 1987
priority date (Note) -
Expired
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Abstract
A modulation-doped field effect transistor includes an undoped semiconductor layer and an arrangement for supplying charge carriers into a region of the semiconductor layer adjacent one side. An arrangement is provided for locally modulating hole and electron density in another region adjacent the other side of the semiconductor layer in a repeating pattern of alternations so as to inhibit current flow in the direction of the alternations.
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