Radiation-sensitive semiconductor device with active screening diode
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United States of America Patent
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-
Aug 15, 1989
Grant Date -
N/A
app pub date -
Jan 26, 1988
filing date -
Feb 16, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A radiation-sensitive semiconductor device has a high-ohmic semiconductor wafer with a thicker edge portion and a thinner central portion, in which a photodiode is located. The surface opposite to the photodiode is provided with a highly-doped contact layer, on which a metal layer is provided. The central portion is so thin that at a low photodiode voltage the depletion zone of the photodiode extends as far as the contact layer. According to the invention, the device includes an active screening diode, which extends both in the edge portion and in the central portion and whose depletion zone extends in the operating condition in the central portion as far as the contact layer. As a result, diffusion of charge carriers from the edge portion to the photodiode is avoided.
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