Short channel CMOS on 110 crystal plane
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United States of America Patent
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-
Aug 15, 1989
Grant Date -
N/A
app pub date -
Jul 14, 1986
filing date -
Oct 17, 1985
priority date (Note) -
Expired
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Abstract
A monocrystalline silicon substrate having a (110) crystal plane is prepared. A CMOS transistor is formed on this substrate. An N channel MOS transistor and a P channel MOS transistor are formed in the surface of the semiconductor substrate. In each of these transistors the channel length is 1.5 .mu.m or less and the velocity saturation phenomenon of electrons is outstanding.
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