Method for synthesizing diamond

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United States of America Patent

PATENT NO 4859490
SERIAL NO

07075470

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Abstract

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A method and apparatus for synthesizing diamond film or coating by applying low-pressurized vapor phase capable of precipitating diamond on the surface of a substrate by activating gas composed of carbon including solid carbon, hydrocarbon, and carbon tetrachloride respectively being mixed with hydrogen. More particularly, the invention relates to an apparatus and method of synthesizing diamond by disposing a grid between a thermoelectron-radiating material heated with activated material gas to a minimum of 1,600.degree. C., and the substrate to be coated, where the thermoelectron radiating material and grid are respectively used for the negative and positive electrodes, followed by provision of potentials by causing the positive and negative electrodes to respectively be connected to the grid and the substrate by arranging another power supply source. The method of synthesizing diamond according to the invention securely generates extremely fine crystalline diamond particles each having a maximum of 2 .mu.m of diameter and provides extremely consummate diamond film having a minimum of 10.sup.10 .OMEGA..multidot.cm of electric resistance, which is substantially the guide for determining the residal amount of carbon such as amorphous carbon and graphite.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTD 15 KITAHAMA 5-CHOME HIGASHI-KU OSAKA 554 JAPAN A CORP OF JAPANNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikegaya, Akihiko Itami, JP 53 1244
Tobioka, Masaaki Kobe, JP 14 311

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