Magnetron with flux switching cathode and method of operation
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United States of America Patent
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-
Sep 12, 1989
Grant Date -
N/A
app pub date -
Mar 31, 1988
filing date -
Mar 31, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.
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