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Abstract

An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the conduction and valence bands of the superlattice. A heterojunction bipolar transistor with the filter between the emitter and base has carriers injected from the emitter into the base with energies confined to levels that minimize transit time across the base; a MESFET with a filter between a heterojunction source to channel has carriers injected with energies confined to minimize transit time across the channel. A diode with a filter in front of a drift region limits the spread of energies of injected carriers.

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First Claim