Method of making insulated-gate field effect transistor
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United States of America Patent
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-
Sep 19, 1989
Grant Date -
N/A
app pub date -
Dec 29, 1988
filing date -
Dec 29, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of manufacturing an insulated-gate field effect transistor is comprised of forming on a semiconductor substrate a gate electrode elecrically insulated from the substrate. A flat insulating film of silicon oxide is formed over the substrate. A pair of openings are formed through the flat insulating film at both sides of the gate electrode such that opposite side thereof are etched and exposed. An oxide film is formed on the exposed side edges of the gate electrode. Impurities are implanted through the pair of openings into the substrate to form source and drain regions. An electroconductive polysilicon film is deposited over the substrate. The deposited polysilicon film is polished to leave a part thereof selectively in the openings to thereby form electrical contacts to the source and drain regions through the openings.
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