Short wavelength pass filter having a metal mesh on a semiconducting substrate
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United States of America Patent
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Oct 3, 1989
Grant Date -
N/A
app pub date -
Jun 15, 1988
filing date -
Jun 15, 1988
priority date (Note) -
Expired
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Abstract
A short pass filter is disclosed which exhibits high transmission in the infrared and/or visible region of the electromagnetic spectrum and which has high rejection in the microwave portion of the spectrum. The filter generally consists of a substrate of semiconducting material, for example, n-type germanium which has been doped with a suitable dopant or grown with impurities to provide a substrate with a known conductivity. A metal mesh is placed either on one or on both surfaces of the substrate, or is buried within the substrate. The combination of the semiconducting material and metal mesh produce a filter which will transmit infrared and/or visible radiation while rejecting microwave radiation through absorption and reflection.
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