Schottky barrier photodiode structure
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United States of America Patent
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Oct 17, 1989
Issued Date -
N/A
app pub date -
Dec 14, 1988
filing date -
Jun 20, 1986
priority date (Note) -
Expired
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Abstract
A Schottky barrier photodiode for detecting infrared radiation uses implantation of metal ions to form a metal silicide. An annular N+ type silicon guard ring is formed in a p-type silicon substrate. Metal ions are implanted into the exposed surface area of the silicon substrate surrounded by the silicon guard ring. The resulting structure is annealed to form a silicide of the implanted metal. A portion of the silicon substrate encircled by the silicon guard ring and above the metal silicide is removed. A thin oxide passivating layer is formed above the metal silicide.
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