Solution growth of lattice mismatched and solubility mismatched heterostructures
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United States of America Patent
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Oct 24, 1989
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N/A
app pub date -
Mar 4, 1988
filing date -
Apr 30, 1987
priority date (Note) -
Expired
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Abstract
The effects of excessive lattice mismatch in solution grown heterostructures are reduced by incorporating a lattice graded interface layer between the substrate and the heteroepitaxial layer. The effects of lattice mismatch are also reduced by reducing the contact area with a selective growth mask which controls where growth initiates on the substrate. The effect of mismatched solubility is reduced by double saturation of the solvent and selective supersaturation of the solvent.
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