Circuit for sensing FET or IGBT drain current over a wide dynamic range
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United States of America Patent
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-
Oct 24, 1989
Grant Date -
N/A
app pub date -
Jun 17, 1988
filing date -
Jun 17, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A current sensing circuit includes a pair of power devices connected in parallel. The mirror terminal of the first power device is coupled to a small sense resistance, and the mirror terminal of the second power device is connected to a large sense resistance. Each mirror terminal is coupled to its own comparator. Small currents are sensed by the comparator coupled to the mirror terminal of the first power device, and large currents are sensed by the comparator coupled to the mirror terminal of the second power device. If multiple mirror terminals are not available, a large sense resistance may be connected to the mirror terminal of the power device, and a small sense resistance may be selectively connected in parallel with the large resistance to provide low current-sensing capabilities. Accuracy of the device is enhanced by circuitry which minimizes the effect of integrated impedance variation and a variation in the low sense resistances.
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