Semiconductor radiation detector
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United States of America Patent
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Nov 7, 1989
Grant Date -
N/A
app pub date -
Jan 29, 1988
filing date -
Feb 6, 1987
priority date (Note) -
Expired
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Abstract
A structure of semiconductor radiation detector element having a p-n junction comprises a substrate layer including a radiation absorbing layer having a silicon equivalent thickness not smaller than 140 .mu.m and located adjacent to a depletion layer formed at the p-n junction. With the simplified structure, both the detection sensitivity and the energy compensating performance are enhanced significantly.
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