Field-effect transistor
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United States of America Patent
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-
Nov 7, 1989
Grant Date -
N/A
app pub date -
Jun 23, 1987
filing date -
Jun 25, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A field-effect transistor wherein a gate electrode conductive layer is connected in parallel to a plurality of conductive layers having a lower resistivity than the gate electrode conductive layer, so that the gate resistance is reduced to provide a high power output and a noise reduction.
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