Selectively formable vertical diode circuit element
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United States of America Patent
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-
Nov 14, 1989
Grant Date -
N/A
app pub date -
May 16, 1986
filing date -
May 16, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type. A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.
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