Importance

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Abstract

The average chemical composition of a reaction band at the interface adjacent co-sintered layers of barium titanate and a low K magnesium zinc titanate is found to be Mg.sub.0.5 Ba.sub.0.25 Zn.sub.0.25 TiO.sub.3. That magnesium barium zinc titanate is further shown to be compatible physically and chemically with barium titanate when the two are made adjacent in the green state and are themselves subsequently co-sintered. The preferred structure for use as a printed-wiring substrate capable of containing surface and buried capacitors and resistors, is a stack having a barium titanate layer sandwiched between two magnesium barium zinc titanate layers. The ratio of the dielectric constants (K) of the two materials exceeds 100. Thus, there is the possibility for making large value capacitors buried in the barium titanate while there is little capacitance and cross-talk between conductors in the outer low K material layers.

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First Claim