Plasma thin film deposition process

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United States of America Patent

PATENT NO 4888199
SERIAL NO

07191448

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Abstract

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In a process of depositing a thin film onto a surface of a substrate with the use of a plasma, wherein the plasma optical emission is monitored, analyzed, and the results used to automatically control the nature of the plasma in order to control the characteristics of the deposited thin film. One aspect of the emission that is detected is the intensity of each of two emission lines of different wavelength bands from the same plasma species, the intensities being ratioed and the ratio compared to a predetermined value known to provide a resulting film with uniform and repeatable characteristics. This ratio is also related to the average electron temperature of the plasma, which can be calculated from it. Additionally, the intensity of another emission line from another of the plasma species may be measured and ratioed to one of the foregoing line intensities if additional control is desired.

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Patent Owner(s)

Patent OwnerAddress
BOC GROUP INC 85 CHESTNUTRIDGE ROAD MONTVALE NEW JERSEY 07645 A CORP OF DENot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Felts, John T Alameda, CA 61 1428
Lopata, Eugene S Fremont, CA 4 138

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