Method for re-using silicon base material of a metal insulator semiconductor (mis) inversion-layer solar cell

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United States of America Patent

PATENT NO 4891325
SERIAL NO

07219449

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Abstract

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A method is proposed for re-using silicon base material of defective MIS inversion-layer solar cells, where at least MIS solar cell-specific layers are stripped off and replaced by corresponding new layers.

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Patent Owner(s)

Patent OwnerAddress
NUKEM GMBH RODENBACHER CHAUSSEE 6 D-6450 HANAU 11 GERMANY A CORP OF GERMANYNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hezel, Rudolf Spardorf, DE 9 450
Hoffmann, Winfried Hanau, DE 3 256
Schum, Berthold Biebergemund, DE 13 87

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