Semiconductor device
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United States of America Patent
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-
Jan 2, 1990
Grant Date -
N/A
app pub date -
Aug 4, 1987
filing date -
Aug 4, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A reaction-preventing film is provided between a capacitor insulating film made of a material having a high dielectric constant, such as Ta.sub.2 O.sub.5, and an upper electrode in order to prevent a reaction of the upper electrode with the capacitor insulating film. This effectively prevents the reaction between the upper electrode and the capacitor caused by a heat treatment conducted after formation of the capacitor, and hence prevents an increase in leakage current caused by the reaction. Thus, the reliability of a semiconductor device is remarkably increased.
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