Method of manufacturing a semiconductor device
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United States of America Patent
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-
Jan 9, 1990
Grant Date -
N/A
app pub date -
Dec 28, 1988
filing date -
Jan 29, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen. According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.
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